A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
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Palacios_A sub-terahertz.pdf
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Author(s)
Hou, Haowen
Liu, Zhihong
Teng, Jinghua
Chua, Soo-Jin
Palacios, Tomas
Date Issued
November 2016
Journal
Applied Physics Express
Publisher
Japan Society of Applied Physics
Citation
Hou, Haowen et al. “A Sub-Terahertz Broadband Detector Based on a GaN High-Electron-Mobility Transistor with Nanoantennas.” Applied Physics Express 10, 1 (November 2016): 014101 © 2017 The Japan Society of Applied Physics
Version
Final published version
Abstract
We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with nanoantennas. The fabricated device shows excellent performance with a maximum responsivity (R v) of 15 kV/W and a minimal noise equivalent power (NEP) of 0.58 pW/Hz[superscript 0.5] for 0.14 THz radiation at room temperature. We consider these excellent results as due to the design of asymmetric nanoantennas. From simulation, we show that indeed such nanoantennas can effectively enhance the local electric field induced by sub-THz radiation and thereby improve the detection response. The excellent results indicate that GaN HEMTs with nanoantennas are future competitive detectors for sub-THz and THz imaging applications.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.7567/APEX.10.014101
