Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics
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Buonassisi_Effective lifetimes.pdf
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Author(s)
Powell, D. M.
Hao, R.
Ravi, T. S.
Hofstetter, Jasmin
Fenning, David P.
Buonassisi, Tonio
Date Issued
December 2013
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Powell, D. M., J. Hofstetter, D. P. Fenning, R. Hao, T. S. Ravi, and T. Buonassisi. “Effective Lifetimes Exceeding 300 Μs in Gettered p-Type Epitaxial Kerfless Silicon for Photovoltaics.” Appl. Phys. Lett. 103, no. 26 (December 23, 2013): 263902. © 2013 AIP Publishing LLC
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Final published version
Abstract
We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low as (3.2 ± 2.2) × 10[superscript 9] cm[superscript −3]) suggest that minority-carrier lifetime is not limited by dissolved iron. An increase in gettered lifetime from <20 to >300 μs is observed after increasing growth cleanliness. This improvement coincides with reductions in the concentration of Mo, V, Nb, and Cr impurities, but negligible change in the low area-fraction (<5%) of dislocated regions. Device simulations indicate that the high bulk lifetime of this material could support solar cell efficiencies >23%.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1063/1.4844915
