Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
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TED2426711_final.pdf
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4.87 MB
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Author(s)
Hiu-Yung Wong
Hatem, Christopher
Lili Yu, Daniel
de Braga, Nelson Almeida
Mickevicius, Rimvydas Vidas
Zhang, Yuhao
Sun, Min
Lin, Yuxuan
Srivastava, Puneet
Azize, Mohamed
Date Issued
May 2015
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yuhao Zhang; Min Sun; Hiu-Yung Wong; Yuxuan Lin; Srivastava, Puneet; Hatem, Christopher; Azize, Mohamed et al. “Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes.” IEEE Transactions on Electron Devices 62, no. 7 (July 2015): 2155–2161. © 2015 Institute of Electrical and Electronics Engineers (IEEE)
Version
Author's final manuscript
Abstract
Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in the GaN-on-Si vertical diodes. Various leakage sources were investigated and separated, including leakage through the bulk drift region, passivation layer, etch sidewall, and transition layers. To suppress the leakage along the etch sidewall, an advanced edge termination technology has been developed by combining plasma treatment, tetramethylammonium hydroxide wet etching, and ion implantation. With this advanced edge termination technology, an OFF-state leakage current similar to Si, SiC, and GaN lateral devices has been achieved in the GaN-on-Si vertical diodes with over 300 V breakdown voltage and 2.9-MV/cm peak electric field. The origin of the remaining OFF-state leakage current can be explained by a combination of electron tunneling at the p-GaN/drift-layer interface and carrier hopping between dislocation traps. The low leakage current achieved in these devices demonstrates the great potential of the GaN-on-Si vertical device as a new low-cost candidate for high-performance power electronics.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1109/TED.2015.2426711
