Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur
Name
Buonassisi_Soft x-ray.pdf
Size
511 KB
Format
Adobe PDF
Checksum (MD5)
f7d22abb8e8c60c2e21c4d676e4e1108
Author(s)
Winkler, Mark Thomas
Newman, Bonna Kay
Buonassisi, Tonio
Wilks, R. G.
Weinhardt, L.
Recht, D.
Said, A. J.
Zhang, Y.
Blum, M.
Krause, S.
Date Issued
October 2011
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Sullivan, J. T. et al. “Soft X-ray Emission Spectroscopy Studies of the Electronic Structure of Silicon Supersaturated with Sulfur.” Applied Physics Letters 99.14 (2011): 142102. ©2011 American Institute of Physics
Version
Final published version
Abstract
We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L[subscript 2,3] emission features are observed above the conventional Si valence band maximum, with intensity scaling linearly with S concentration. The lineshape of the S-induced features change across the insulator-to-metal transition, indicating a significant modification of the local electronic structure concurrent with the change in macroscopic electronic behavior. The relationship between the Si L[subscript 2,3] XES spectral features and the anomalously high sub-band gap infrared absorption is discussed.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/1.3643050
