Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological Insulator Bi2Se3 Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy
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Wang-2012-Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological Insulator.pdf
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Author(s)
Wang, Y. H.
Hsieh, David
Sie, Edbert Jarvis
Steinberg, Hadar
Gardner, Dillon Richard
Lee, Young S.
Jarillo-Herrero, Pablo
Gedik, Nuh
Date Issued
September 2012
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Wang, Y. et al. “Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological Insulator Bi_{2}Se_{3} Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy.” Physical Review Letters 109.12 (2012). © 2012 American Physical Society
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Final published version
Abstract
We perform time- and angle-resolved photoemission spectroscopy of a prototypical topological insulator (TI) Bi[subscript 2]Se[subscript 3] to study the ultrafast dynamics of surface and bulk electrons after photoexcitation. By analyzing the evolution of surface states and bulk band spectra, we obtain their electronic temperature and chemical potential relaxation dynamics separately. These dynamics reveal strong phonon-assisted surface-bulk coupling at high lattice temperature and total suppression of inelastic scattering between the surface and the bulk at low lattice temperature. In this low temperature regime, the unique cooling of Dirac fermions in TI by acoustic phonons is manifested through a power law dependence of the surface temperature decay rate on carrier density.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.109.127401
