Indirect Wafer Bonding and Epitaxial Transfer of GaSb-Based Materials
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11664_2012_Article_2397.pdf
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454.79 KB
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57899a5c047e664fd961f849d7bdc96c
Author(s)
Vangala, S. R.
Grzesik, Michael J.
Goodhue, William D.
Date Issued
January 2013
Journal
Journal of Electronic Materials
Publisher
Springer US
Citation
Grzesik, M., S. R. Vangala, and W. D. Goodhue. “Indirect Wafer Bonding and Epitaxial Transfer of GaSb-Based Materials.” Journal of Electronic Materials 42, no. 4 (January 24, 2013): 679–683.
Version
Author's final manuscript
Abstract
Results from a study of indirect wafer bonding and epitaxial transfer of GaSb-based materials are presented. Benzocyclobutene (BCB) was used as a bonding agent to bond GaSb and epitaxial structures lattice matched to GaSb onto Si, GaAs, and sapphire carrier substrates. To better understand sources of stress during the bonding process, which can result in cracking and subsurface damage of the GaSb-based materials, BCB’s hardness and reduced elastic modulus were measured at various stages during the curing process. Based on the results of curing experiments, a bonding and epitaxial transfer process for GaSb-based materials was then developed. Following bonding, using an experimentally determined low-stress cure cycle, GaSb substrates were removed from epitaxial layers of InAsSb using a combination of mechanical thinning and polishing followed by selective chemical etching using a hydrofluoric and chromic acid solution. Etch selectivity data are also presented where selectivity greater than 100:1 is achieved for GaSb:InAsSb.
MIT Department
Lincoln Laboratory
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1007/s11664-012-2397-7
