Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs
Name
RC-281 preprint.pdf
Description
Accepted version
Size
471.35 KB
Format
Adobe PDF
Checksum (MD5)
c9b662a14667453c6dc6ac78cf521ce2
Author(s)
Lee, Ethan S
Hurtado, Luis
Joh, Jungwoo
Krishnan, Srikanth
Pendharkar, Sameer
del Alamo, Jesus A
Date Issued
May 2019
Journal
2019 IEEE International Reliability Physics Symposium (IRPS)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Lee, Ethan S et al. "Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs." 2019 IEEE International Reliability Physics Symposium (IRPS), March-April 2019, Monterey, California, Institute of Electrical and Electronics Engineers, May 2019. © 2019 IEEE
Version
Author's final manuscript
Abstract
We investigate time-dependent dielectric breakdown (TDDB) in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) under forward bias AC stress which better emulates real-world operational conditions. To this end, we have performed TDDB experiments across a wide range of frequencies, temperatures, and recovery voltage levels. We find that TDDB under AC stress shows longer breakdown times than under DC stress and that this increase is more prominent with higher frequency, lower temperature, and more negative recovery voltage. We hypothesize that this is due to the dynamics of the gate stack in GaN MIS-HEMTs biased with a high positive gate voltage. Under these conditions, a second electron channel forms at the dielectric/AlGaN interface. This process is relatively slow as these electrons come from the 2DEG at the AlGaN/GaN interface and must overcome the energy barrier presented by the AlGaN. At the same gate voltage then, the electric field across the gate oxide is lower in magnitude under AC stress at high enough frequency than under DC stress explaining the obtained results.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/irps.2019.8720550
