Large modulation capacity in graphene-based slot modulators by enhanced hybrid plasmonic effects
Name
s41598-018-34914-6.pdf
Size
1.94 MB
Format
Unknown
Checksum (MD5)
1b43cbe650e3c40686d6988cddbb1a48
Author(s)
Hao, Ran
Ye, Ziwei
Gu, YiJie
Peng, Xiliang
Chen, Hongsheng
Li, Erping
Hao, Ran
Ye, Ziwei
Gu, YiJie
Peng, Xiliang
Date Issued
November 2018
Journal
Scientific Reports
Citation
Hao, Ran, Ziwei Ye, YiJie Gu, Xiliang Peng, Hongsheng Chen, and Erping Li. “Large Modulation Capacity in Graphene-Based Slot Modulators by Enhanced Hybrid Plasmonic Effects.” Scientific Reports 8, no. 1 (November 15, 2018). doi:10.1038/s41598-018-34914-6.
Version
Final published version
Abstract
© 2018, The Author(s). We present an effective scheme to improve the modulation capacity in graphene-based silicon modulator by employing the double slots configuration with hybrid plasmonic effects. Two modulators, i.e., metal-insulator-metal and insulator-metal-insulator configurations have been demonstrated, showing that the double slots design can significantly improve the modulation efficiency. The obtained modulation efficiency is up to 0.525 dB/μm per graphene layer, far exceeding previous studies. It can be found that the light-graphene interaction plays a pivotal role in the modulation efficiency, whereas the height of metal has profound influence on the modulation. Our results may promote various future modulation devices based on graphene.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Creative Commons Attribution 4.0 International license
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1038/s41598-018-34914-6
