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  4. Improvement of infrared single-photon detectors absorptance by integrated plasmonic structures

Improvement of infrared single-photon detectors absorptance by integrated plasmonic structures

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Author(s)
Najafi, Faraz
•
Berggren, Karl K.
•
Csete, Maria
•
Sipos, Aron
•
Szalai, Aniko
•
Szabo, Gabor
Date Issued
August 2013
Journal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Csete, Mária, Áron Sipos, Anikó Szalai, Faraz Najafi, Gábor Szabó, and Karl K. Berggren. “Improvement of Infrared Single-Photon Detectors Absorptance by Integrated Plasmonic Structures.” Sci. Rep. 3 (August 12, 2013).
Version
Final published version
Abstract
Plasmonic structures open novel avenues in photodetector development. Optimized illumination configurations are reported to improve p-polarized light absorptance in superconducting-nanowire single-photon detectors (SNSPDs) comprising short- and long-periodic niobium-nitride (NbN) stripe-patterns. In OC-SNSPDs consisting of ~quarter-wavelength dielectric layer closed by a gold reflector the highest absorptance is attainable at perpendicular incidence onto NbN patterns in P-orientation due to E-field concentration at the bottom of nano-cavities. In NCAI-SNSPDs integrated with nano-cavity-arrays consisting of vertical and horizontal gold segments off-axis illumination in S-orientation results in polar-angle-independent perfect absorptance via collective resonances in short-periodic design, while in long-periodic NCAI-SNSPDs grating-coupled surface waves promote EM-field transportation to the NbN stripes and result in local absorptance maxima. In NCDAI-SNSPDs integrated with nano-cavity-deflector-array consisting of longer vertical gold segments large absorptance maxima appear in 3p-periodic designs due to E-field enhancement via grating-coupled surface waves synchronized with the NbN stripes in S-orientation, which enable to compensate fill-factor-related retrogression.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported License
http://creativecommons.org/licenses/by-nc-sa/3.0/
Persistent DSpace Link
http://hdl.handle.net/1721.1/85968
DOI of Published Version
https://doi.org/10.1038/srep02406
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