Preserving nanoscale features in polymers during laser induced graphene formation using sequential infiltration synthesis
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s41467-020-17259-5.pdf
Description
Published version
Size
1.82 MB
Format
Adobe PDF
Checksum (MD5)
d710a17cdd260fc8fca2964b41c1c025
Author(s)
Bergsman, David S.
Getachew, Bezawit Asheber
Grossman, Jeffrey C.
Date Issued
July 2020
Journal
Nature Communications
Publisher
Springer Science and Business Media LLC
Citation
Bergsman, David S. et al. “Preserving nanoscale features in polymers during laser induced graphene formation using sequential infiltration synthesis.” Nature Communications, 11, 1 (July 2020): 3636 © 2020 The Author(s)
Version
Final published version
Abstract
Direct lasing of polymeric membranes to form laser induced graphene (LIG) offers a scalable and potentially cheaper alternative for the fabrication of electrically conductive membranes. However, the high temperatures induced during lasing can deform the substrate polymer, altering existing micro- and nanosized features that are crucial for a membrane’s performance. Here, we demonstrate how sequential infiltration synthesis (SIS) of alumina, a simple solvent-free process, stabilizes polyethersulfone (PES) membranes against deformation above the polymers’ glass transition temperature, enabling the formation of LIG without any changes to the membrane’s underlying pore structure. These membranes are shown to have comparable sheet resistance to carbon-nanotube-composite membranes. They are electrochemically stable and maintain their permeability after lasing, demonstrating their competitive performance as electrically conductive membranes. These results demonstrate the immense versatility of SIS for modifying materials when combined with laser induced graphitization for a variety of applications.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Creative Commons Attribution 4.0 International license
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DOI of Published Version
https://doi.org/10.1038/s41467-020-17259-5
