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  4. Hole opening from growing interfacial voids: A possible mechanism of solid state dewetting

Hole opening from growing interfacial voids: A possible mechanism of solid state dewetting

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sword-2026-03-25T19:34:05.original.xml (130 B)
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Author(s)
Curiotto, Stefano
•
Chame, Anna
•
Müller, Pierre
•
Thompson, Carl V
•
Pierre-Louis, Olivier
Date Issued
March 3, 2022
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Stefano Curiotto, Anna Chame, Pierre Müller, Carl V. Thompson, Olivier Pierre-Louis; Hole opening from growing interfacial voids: A possible mechanism of solid state dewetting. Appl. Phys. Lett. 28 February 2022; 120 (9): 091603.
Version
Final published version
Abstract
Vacancies at interfaces between a film and a substrate can affect material properties and could play a role in solid state dewetting. Using kinetic Monte Carlo simulations, we show that interfacial mono-vacancies diffuse and coalesce to form vacancy clusters and voids. The film/substrate excess energy ES, which is related to the apparent contact angle, controls the mechanisms of coalescence. Depending on ES, voids emerging at the film surface form a hole that can be filled by the film or can lead to dewetting of the film from the substrate.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
https://hdl.handle.net/1721.1/165257
DOI of Published Version
10.1063/5.0083139
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