A multi-state memory device based on the unidirectional spin Hall magnetoresistance
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Author(s)
Gambardella, Pietro
Avci, Can Onur
Mann, Maxwell
Tan, Aik Jun
Beach, Geoffrey Stephen
Date Issued
May 2017
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Avci, Can Onur et al. “A Multi-State Memory Device Based on the Unidirectional Spin Hall Magnetoresistance.” Applied Physics Letters 110, 20 (May 2017): 203506 © 2017 Author(s)
Version
Final published version
Abstract
We report on a memory device concept based on the recently discovered unidirectional spin Hall magnetoresistance (USMR), which can store multiple bits of information in a single ferromagnetic heterostructure. We show that the USMR with possible contribution of Joule heating-driven magnetothermal effects in ferromagnet/normal metal/ferromagnet (FM/NM/FM) trilayers gives rise to four different 2nd harmonic resistance levels corresponding to four magnetization states (¶, ⇄, ⇆, ¶) in which the system can be found. Combined with the possibility of controlling the individual FMs by spin-orbit torques, we propose that it is possible to build an all-electrical lateral two-terminal multi-bit-per-cell memory device.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1063/1.4983784
