Optically pumped InxGa₁âxN/InyGa₁âyN multiple quantum well vertical cavity surface emitting laser operating at room temperature.
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AMMNS015.pdf
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Author(s)
Chen, Zhen
Chua, Soo-Jin
Chen, Peng
Zhang, Ji
Date Issued
January 2004
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa₁â‚‹xN/InyGa₁â‚‹yN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, one of the modes of the Fabry-Perot cavity formed by the GaN/sapphire and the GaN/air interfaces, shows a strong superlinear increase in intensity with excitation intensity rise. The vertical cavity surface emitting laser (VCSELs) structure is grown by metal-organic chemical vapor phase deposition and the threshold is as low as 200kW/cm². The lasing in the sample probably results from the ultrahigh material gain due to the spontaneous formation of dense array of nanoscale InGaN quantum dots (QDs) having an exceptional high area density.
Subjects
laser excitation
optoelectronic devices
quantum well lasers
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