Graphene Frequency Multipliers
Name
Wang-2009-Graphene Frequency M.pdf
Size
138.8 KB
Format
Adobe PDF
Checksum (MD5)
e60b4c4092c858e29be4a004ef8d908e
Author(s)
Wang, Han
Nezich, Daniel A.
Kong, Jing
Palacios, Tomas
Date Issued
April 2009
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Han Wang et al. “Graphene Frequency Multipliers.” Electron Device Letters, IEEE 30.5 (2009): 547-549. © 2009 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultrahigh frequencies.
Subjects
graphene field-effect transistors (G-FETs)
full-wave rectifiers
frequency multipliers
frequency doublers
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
http://dx.doi.org/10.1109/LED.2009.2016443
