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Filling the terahertz gap with sand: High-power terahertz radiators in silicon
Name
2015_BCTM_THz_in_Silicon.pdf
Description
Accepted version
Size
3.58 MB
Format
Adobe PDF
Checksum (MD5)
9f759489f14f116e7193f538794a7a45
Author(s)
Han, Ruonan
Afshari, Ehsan
Date Issued
October 2015
Publisher
IEEE
Citation
Han, Ruonan and Afshari, Ehsan. 2015. "Filling the terahertz gap with sand: High-power terahertz radiators in silicon."
Version
Author's final manuscript
Abstract
© 2015 IEEE. This paper reviews our recent work on Si and SiGe THz sources that generate high-power coherent radiation. Our design approach blends the optimization of device operation near or above fmax with unconventional circuit topologies and energy-efficient electromagnetic structures. Using a 130-nm SiGe HBT process (fmax=3D280 GHz), our 320-GHz transmitter produces a record radiated power (3.3 mW) and DC-to-THz radiation efficiency (0.54%) among all THz signal sources in silicon. This transmitter also demonstrates fully-integrated phase-locking capability for THz radiators for the first time. In this paper, a 260-GHz pulse radiator and a 340-GHz phased array, which are based on a 65-nm bulk CMOS process, are also presented. The former generates a radiated power of 1.1 mW, and provides THz pulses with 25-GHz bandwidth. The latter generates a radiated power of 0.8 mW and has a 50° beam-steering capability. These works demonstrate a promising roadmap towards future THz microsystems using silicon integrated-circuit technologies.
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
10.1109/bctm.2015.7340574
