Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure
Name
1805.12432.pdf
Description
Accepted version
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1.77 MB
Format
Adobe PDF
Checksum (MD5)
374d20e56d4e994a601c5c195c24b3fd
Author(s)
Palacios, Tomas
Date Issued
October 2017
Journal
Electron device letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Romero, M. Fátima, Alberto Boscá, Jorge Pedrós, Javier Martínez, Rajveer Fandan, Tomás Palacios and Fernando Calle. "Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure." Electron Device Letters 38 no.10 (October 2017): 1441-1444.
Version
Author's final manuscript
Abstract
The effect of a 2D graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I-D,max) and the maximum transconductance (g-m,) decreased gradually as the mist exposure time increased, up to 23% and 10%, respectively. Moreover, the gate lag ratio increased around 10% during mist exposure. In contrast, devices with a GL showed a robust behavior and not significant changes in the electrical characteristics in both dc and pulsed conditions. The origin of these behaviors has been discussed and the results pointed to the GL as the key factor for improving the moisture resistance of the SiN passivation layer.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/LED.2017.2747500
