Gigahertz Ambipolar Frequency Multiplier Based on Cvd Graphene
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Kong_Gigahertz ambipolar.pdf
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1.8 MB
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Adobe PDF
Checksum (MD5)
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Author(s)
Wang, Han
Hsu, Allen Long
Kim, Ki Kang
Kong, Jing
Palacios, Tomas
Date Issued
December 2010
Journal
Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wang, Han et al. “Gigahertz Ambipolar Frequency Multiplier Based on CVD Graphene.” Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010. 23.6.1–23.6.4. © Copyright 2010 IEEE
Version
Final published version
Abstract
Ambipolar transport in graphene offers great opportunities for novel device and circuit applications. This paper discusses the RF performance of CVD grown graphene transistors for the first time. Then, a new graphene ambipolar frequency multiplier that can operate at 1.4 GHz with extremely high output spectral purity (>; 90%) is demonstrated. These GHz graphene frequency multipliers, made from wafer-scale graphene synthesis and fabrication processes, demonstrate the great potential of graphene-based ambipolar devices for RF and mixed-signal applications.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/IEDM.2010.5703423
