Oblique Angle Deposition of Germanium Film on Silicon Substrate
Author(s)
Chew, Han Guan
Choi, Wee Kiong
Chim, Wai Kin
Fitzgerald, Eugene A.
Date Issued
January 2005
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy.
Subjects
Oblique angle deposition
Germanium nanowires
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