Studying femtosecond-laser hyperdoping by controlling surface morphology
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Gradecak_Studying femtosecond.pdf
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1.34 MB
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Author(s)
Winkler, Mark T.
Sher, Meng-Ju
Lin, Yu-Ting
Smith, Matthew J.
Zhang, Haifei
Mazur, Eric
Gradecak, Silvija
Date Issued
May 2012
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Winkler, Mark T., Meng-Ju Sher, Yu-Ting Lin, Matthew J. Smith, Haifei Zhang, Silvija Gradečak, and Eric Mazur. “Studying femtosecond-laser hyperdoping by controlling surface morphology.” Journal of Applied Physics 111, no. 9 (2012): 093511. © 2012 American Institute of Physics
Version
Final published version
Abstract
We study the fundamental properties of femtosecond-laser (fs-laser) hyperdoping by developing techniques to control the surface morphology following laser irradiation. By decoupling the formation of surface roughness from the doping process, we study the structural and electronic properties of fs-laser doped silicon. These experiments are a necessary step toward developing predictive models of the doping process. We use a single fs-laser pulse to dope silicon with sulfur, enabling quantitative secondary ion mass spectrometry, transmission electron microscopy, and Hall effect measurements. These measurements indicate that at laser fluences at or above 4 kJ m[superscript −2], a single laser pulse yields a sulfur dose >(3 ± 1) × 10[superscript 13] cm[superscript −2] and results in a 45-nm thick amorphous surface layer. Based on these results, we demonstrate a method for hyperdoping large areas of silicon without producing the surface roughness.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4709752
