AlGaN/GaN HEMT With 300-GHz fmax
Name
Chung-2010-AlGaNGaN HEMT with 300-GHz fmax.pdf
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Author(s)
Chung, Jinwook
Hoke, William E.
Chumbes, Eduardo M.
Palacios, Tomas
Date Issued
March 2010
Journal
Electron Device Letters, IEEE
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Chung, J.W. et al. “AlGaN/GaN HEMT With 300-GHz $f_{\max}$.” IEEE Electron Device Letters 31.3 (2010): 195–197. © Copyright 2010 IEEE
Version
Final published version
Abstract
We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage gate-recess technology, scaled device geometry, and recessed source/drain ohmic contacts to simultaneously enable minimum short-channel effects (i.e., high output resistance R[subscript ds]) and very low parasitic resistances. A 60-nm-gate-length HEMT with recessed AlGaN barrier exhibited excellent R[subscript ds] of 95.7 ????mm, R[subscript on] of 1.1 ~ 1.2 ?? ?? mm, and f[subscript max] of 300 GHz, with a breakdown voltage of ~ 20 V. To the authors' knowledge, the obtained f[subscript max] is the highest reported to date for any nitride transistor. The accuracy of the f[subscript max] value is verified by small signal modeling based on carefully extracted S-parameters.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/LED.2009.2038935
