Resonant body transistors in standard CMOS technology
Name
Daniel Marathe - Ultrasonics 2012 paper.pdf
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809.13 KB
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Author(s)
Marathe, Radhika A.
Wang, Wentao
Mahmood, Zohaib
Daniel, Luca
Weinstein, Dana
Date Issued
October 2012
Journal
Proceedings of the 2012 IEEE International Ultrasonics Symposium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Marathe, R., W. Wang, Z. Mahmood, L. Daniel, and D. Weinstein. “Resonant Body Transistors in Standard CMOS Technology.” 2012 IEEE International Ultrasonics Symposium (October 2012).
Version
Author's final manuscript
Abstract
This work presents Si-based electromechanical resonators fabricated at the transistor level of a standard SOI CMOS technology and realized without the need for any postprocessing or packaging. These so-called Resonant Body Transistors (RBTs) are driven capacitively and sensed by piezoresistively modulating the drain current of a Field Effect Transistor (FET). First generation devices operating at 11.1-11.5 GHz with footprints of 3μm×5μm are demonstrated. These unreleased bulk acoustic resonators are completely buried within the CMOS stack and acoustic energy at resonance is confined using Acoustic Bragg Reflectors (ABRs). The complimentary TCE of Si/SiO[subscript 2] in the resonator and the surrounding ABRs results in a temperature stability TCF of <;3 ppm/K. Comparative behavior of devices is also discussed to analyze the effect of fabrication variations and active sensing.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/ULTSYM.2012.0071
