The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
Name
Gradecak_Origins of pressure.pdf
Size
3.26 MB
Format
Adobe PDF
Checksum (MD5)
76e9600791de978d89829ef36daf7ce2
Author(s)
Smith, Matthew J.
Sher, Meng-Ju
Franta, Benjamin
Lin, Yu-Ting
Mazur, Eric
Gradecak, Silvija
Date Issued
October 2012
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Smith, Matthew J., Meng-Ju Sher, Benjamin Franta, Yu-Ting Lin, Eric Mazur, and Silvija Gradečak. “The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation.” Journal of Applied Physics 112, no. 8 (2012): 083518. © 2012 American Institute of Physics
Version
Final published version
Abstract
Surface texturing of silicon using femtosecond (fs) laser irradiation is an attractive method for enhancing light trapping, but the laser-induced damage that occurs in parallel with surface texturing can inhibit device performance. In this work, we investigate the light-material interaction during the texturing of silicon by directly correlating the formation of pressure-induced silicon polymorphs, fs-laser irradiation conditions, and the resulting morphology and microstructure using scanning electron microscopy, micro-Raman spectroscopy, and transmission electron microscopy. We show that raster scanning a pulsed laser beam with a Gaussian profile enhances the formation of crystalline pressure-induced silicon polymorphs by an order of magnitude compared with stationary pulsed fs-laser irradiation. Based on these observations, we identify resolidification-induced stresses as the mechanism responsible for driving sub-surface phase transformations during the surface texturing of silicon, the understanding of which is an important first step towards reducing laser-induced damage during the texturing of silicon with fs-laser irradiation.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/1.4759140
