A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
Name
Kazior-2009-A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates.pdf
Size
1.04 MB
Format
Adobe PDF
Checksum (MD5)
725fc0d657071fe3f7f05995ed69e8c6
Author(s)
Bulsara, Mayank
Fitzgerald, Eugene A.
LaRoche, J. R.
Kazior, T. E.
Lubyshev, D.
Fastenau, J. M.
Liu, W. K.
Urteaga, M.
Ha, W.
Bergman, J.
Date Issued
July 2009
Journal
IEEE MTT-S International Microwave Symposium Digest, 2009 MTT '09
Publisher
Institute of Electrical and Electronics Engineers
Citation
Kazior, T.E. et al. “A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates.” Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. 2009. 1113-1116. © 2009 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). A BCB based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit. The heterogeneously integrated differential amplifier serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs.
Subjects
CMOS integrated circuits
Differential amplifiers
Indium Phosphide
Heterojunction bipolar transistors
Monolithic integrated circuits
Silicon
MIT Department
MIT Materials Research Laboratory
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/MWSYM.2009.5165896
