Fabrication and testing of dual gate p-channel MOSFETs
Name
867649970-MIT.pdf
Description
Full printable version
Size
1.48 MB
Format
Adobe PDF
Checksum (MD5)
64a5238b51d2b5bda70c9dcf9a2052e1
Author(s)
Easley, Justin Lavaughn
Advisor(s)
Marc A. Kastner.
Date Issued
2013
Publisher
Massachusetts Institute of Technology
Abstract
In this thesis, I fabricated and tested p-channel dual gate MOSFETs that will be used to make conductance and resistance measurements of nanocrystalline solids. Using MOSFETs with narrow gates, we can measure the resistance of these nanocrystals, which are typically extremely high. The group had previously used n-channel MOSFETs, and this project tests the potential for using p-channel devices. This thesis discusses the fabrication techniques and challenges, as well as G-Vg, threshold voltage, and hole mobility measurements from wide gate devices, which are used as a proof of concept for the narrow gate devices. Future work in the group will finish fabricating and testing narrow gate devices.
Description
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2013.
Cataloged from PDF version of thesis.
Includes bibliographical references (page 31).
Subjects
Physics.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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