GaN Nanopore Arrays: Fabrication and Characterization
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AMMNS007.pdf
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456.46 KB
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04bab44811f6ea35c20ed3d7f5b50806
Author(s)
Wang, Yadong
Peng, Chen
Sander, Melissa
Chua, Soo-Jin
Fonstad, Clifton G. Jr.
Date Issued
January 2004
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizing the aluminum. To minimize plasma-induced damage, the template was exposed to CF4-based plasma conditions. Scanning electron microscopy (SEM) analysis shows that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template. The pore diameter in the AAO film can be easily controlled by tuning the anodization conditions. Atomic force microscopy (AFM), photoluminescence (PL) and micro-Raman techniques were employed to assess the quality of the etched GaN nanopore surface. Such a cost-effective method to produce nano-patterned GaN template would be useful for growth and fabrication of III-Nitrides based nanostructures and photonic band gap materials.
Subjects
GaN nanopore arrays
inductively coupled plasma etching
anodic aluminum oxide
pore diameter
nanostructures
photonic band gap materials
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