High performance germanium on silicon photodiodes for back-end-of-line photonic integration
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111105_1_5.0153651.pdf
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Published version
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1.37 MB
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Author(s)
Marzen, S
Postelnicu, E
Michel, J
Wada, K
Kimerling, LC
Date Issued
September 11, 2023
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
S. Marzen, E. Postelnicu, J. Michel, K. Wada, L. C. Kimerling; High performance germanium on silicon photodiodes for back-end-of-line photonic integration. Appl. Phys. Lett. 11 September 2023; 123 (11): 111105.
Version
Final published version
Abstract
Integration of near-infrared photodetectors in the back-end-of-line requires low temperature growth of Ge (<450 °C). We have fabricated high performance, vertical incidence Ge-on-Si photodiodes under thermal budget constraints with as-grown diodes achieving an internal quantum efficiency (IQE) of 38% and a dark current density of Jd = 272 μA/cm2 at a reverse bias of Vr = 5 V and a wavelength of λ = 1310 nm. The photodiode design incorporates a remote heterointerface, demonstrating that Ge material quality is sufficiently high for minority carriers to diffuse to the Ge/Si interface. Post-growth annealing improves device performance, including 500 °C 3 h exposure that improves IQE to 57% and Jd = 165
A/cm2. Low-temperature grown Ge-on-Si photodiodes give comparable performance to diodes processed at high temperatures despite thermal budget constraints.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1063/5.0153651
