Non-stationary transport effects in deep sub-micron channel Si mosfets
Name
24578079-MIT.pdf
Description
Full printable version
Size
6.99 MB
Format
Adobe PDF
Checksum (MD5)
64e0d1639123d7824d0664bf9c5d3773
Author(s)
Shahidi, Ghavam Ghavami
Advisor(s)
Dimitri A. Antoniadis and Henry I. Smith.
Date Issued
1989
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineeing, 1989.
Includes bibliographical references (leaves [132]-135).
Subjects
Electrical Engineering
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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