Femtosecond laser processing of crystalline silicon
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IMST010.pdf
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Author(s)
Tran, D. V.
Lam, Yee Cheong
Zheng, H. Y.
Murukeshan, V. M.
Chai, J.C.
Hardt, David E.
Date Issued
January 2005
Series/Report no.
Innovation in Manufacturing Systems and Technology (IMST);
Abstract
This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) with different number of pulses were studied. New morphological features such as pits, cracks formation, Laser-Induced Periodic Surface Structures (LIPSS) and ablation were observed. The investigation indicated that there are two distinct mechanisms under femtosecond laser irradiation: low fluence regime with different morphological features and high fluence regime with high material removal and without complex morphological features.
Subjects
crystalline silicon
femtosecond laser
morphology
ablation
incubation effect
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