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High spectro-temporal compression on a nonlinear CMOS-chip

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sword-2022-05-18T13:43:07.original.xml (130 B)
Original SWORD entry document
Author(s)
Choi, Ju Won
•
Sahin, Ezgi
•
Sohn, Byoung-Uk
•
Chen, George FR
•
Ng, Doris KT
•
Agarwal, Anuradha M
•
Kimerling, Lionel C
•
Tan, Dawn TH
Date Issued
2021
Journal
Light: Science & Applications
Publisher
Springer Science and Business Media LLC
Citation
Choi, Ju Won, Sahin, Ezgi, Sohn, Byoung-Uk, Chen, George FR, Ng, Doris KT et al. 2021. "High spectro-temporal compression on a nonlinear CMOS-chip." Light: Science & Applications, 10 (1).
Version
Final published version
Abstract
AbstractOptical pulses are fundamentally defined by their temporal and spectral properties. The ability to control pulse properties allows practitioners to efficiently leverage them for advanced metrology, high speed optical communications and attosecond science. Here, we report 11× temporal compression of 5.8 ps pulses to 0.55 ps using a low power of 13.3 W. The result is accompanied by a significant increase in the pulse peak power by 9.4×. These results represent the strongest temporal compression demonstrated to date on a complementary metal–oxide–semiconductor (CMOS) chip. In addition, we report the first demonstration of on-chip spectral compression, 3.0× spectral compression of 480 fs pulses, importantly while preserving the pulse energy. The strong compression achieved at low powers harnesses advanced on-chip device design, and the strong nonlinear properties of backend-CMOS compatible ultra-silicon-rich nitride, which possesses absence of two-photon absorption and 500× larger nonlinear parameter than in stoichiometric silicon nitride waveguides. The demonstrated work introduces an important new paradigm for spectro-temporal compression of optical pulses toward turn-key, on-chip integrated systems for all-optical pulse control.
MIT Department
SUTD-MIT International Design Centre (IDC)
Massachusetts Institute of Technology. Microphotonics Center
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution 4.0 International License
https://creativecommons.org/licenses/by/4.0
Persistent DSpace Link
https://hdl.handle.net/1721.1/142576
DOI of Published Version
https://doi.org/10.1038/S41377-021-00572-Z
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