Analysis of optical integration between Si3N4 waveguide and a Ge-based optical modulator using a lateral amorphous GeSi taper at the telecommunication wavelength of 1.55 µm
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applsci-09-03846.pdf
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Checksum (MD5)
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Author(s)
Traiwattanapong, Worawat
Wada, Kazumi
Chaisakul, Papichaya
Alternative Title
Analysis of optical integration between Si[subscript 3]N[subscript 4] waveguide and a Ge-based optical modulator using a lateral amorphous GeSi taper at the telecommunication wavelength of 1.55 µm
Date Issued
September 13, 2019
Journal
Applied Sciences
Publisher
Multidisciplinary Digital Publishing Institute
Citation
Traiwattanapong, Worawat, Kazumi Wada, and Papichaya Chaisakul, "Analysis of optical integration between Si3N4 waveguide and a Ge-based optical modulator using a lateral amorphous GeSi taper at the telecommunication wavelength of 1.55 µm." Applied Sciences 9, 18 (Sept. 2019): no. 3846 doi 10.3390/app9183846 ©2019 Author(s)
Version
Final published version
Abstract
We report on the theoretical investigation of using an amorphous Ge[subscript 0.83]Si[subscript 0.17] lateral taper to enable a low-loss small-footprint optical coupling between a Si[subscript 3]N[subscript 4] waveguide and a low-voltage Ge-based Franz-Keldysh optical modulator on a bulk Si substrate using 3D Finite-Difference Time-Domain (3D-FDTD) simulation at the optical wavelength of 1550 nm. Despite a large refractive index and optical mode size mismatch between Si[subscript 3]N[subscript 4] and the Ge-based modulator, the coupling structure rendered a good coupling performance within fabrication tolerance of advanced complementary metal-oxide semiconductor (CMOS) processes. For integrated optical modulator performance, the Si[subscript 3]N[subscript 4]-waveguide-integrated Ge-based on Si optical modulators could simultaneously provide workable values of extinction ratio (ER) and insertion loss (IL) for optical interconnect applications with a compact footprint. Keywords: germanium; silicon nitride; optical interconnect; Franz–Keldysh effect
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.3390/app9183846
