On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si
Name
Chung-2009-On-Wafer Integration of Nitrides and Si Devices Bringing the Power of Polarization to Si.pdf
Size
1.04 MB
Format
Adobe PDF
Checksum (MD5)
1897002727d5018ab80011b40f318369
Author(s)
Chung, Jinwook
Lu, Bin
Palacios, Tomas
Date Issued
July 2009
Journal
Proceedings of the IEEE MTT-S International Microwave Symposium Digest, 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chung, J.W., Bin Lu, and T. Palacios. “On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si.” Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. 2009. 1117-1120. © Copyright 2010 IEEE
Version
Final published version
Abstract
The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. Si-GaN-Si virtual substrates have been recently fabricated through substrate removal and wafer bonding processes. The very high thermal stability of nitrides allows for the fabrication of Si CMOS electronics on these substrates without degrading the performance of the embedded nitride layer. In addition, GaN transistors on Si (001) have been fabricated on these substrates for the first time. Some of the many new circuits and devices that this integration allows include high power analog-to-digital converters, high speed differential amplifiers, normally-off power transistors, and highly-compact power regulator circuits.
Subjects
Silicon
Nitride Semiconductors
MOSFET
Integration
High Electron Mobility Transistor
HEMT
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/MWSYM.2009.5165897
