Enhancement of Optical Response in Nanowires by Negative-Tone PMMA Lithography
Name
1811.05192.pdf
Description
Submitted version
Size
544.8 KB
Format
Adobe PDF
Checksum (MD5)
dcf3bdb94c1232087a43bab5cb44acbc
Author(s)
Charaev, Ilya
Dane, Andrew
Agarwal, Akshay
Berggren, Karl K.
Date Issued
February 2019
Journal
IEEE Transactions on Applied Superconductivity
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Charaev, Ilya et al "Enhancement of Optical Response in Nanowires by Negative-Tone PMMA Lithography." IEEE Transactions on Applied Superconductivity 29, 5 (August 2019): 1100905 ©2019 IEEE.
Version
Original manuscript
Abstract
The method of negative-tone polymethyl methacrylate (PMMA) electron-beam lithography is investigated to improve the performance of nanowire-based superconducting detectors. Using this approach, the superconducting nanowire single-photon detectors (SNSPDs) have been fabricated from 5-nm-thick NbN film sputtered at room temperature. To investigate the impact of this process, SNSPDs were prepared by positive-tone- and negative-tone-PMMA lithography, and their electrical and photodetection characteristics at 4.2 K were compared. The SNSPDs made by negative-tone-PMMA lithography show higher critical-current density and higher photon count rate at various wavelengths. Our results suggest a higher negative-tone-PMMA technology may be preferable to the standard positive-tone-PMMA lithography for this application. Keywords: Films; Nanowires; Lithography; Temperature measurement; Detectors; Current measurement; Niobium compounds
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/tasc.2019.2898677
