Bright High-Purity Quantum Emitters in Aluminum Nitride Integrated Photonics
Name
2006.16276.pdf
Description
Submitted version
Size
1.58 MB
Format
Adobe PDF
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Author(s)
Lienhard, Benjamin
Jeong, Kwang-Yong
Moon, Hyowon
Iranmanesh, Ava
Englund, Dirk R.
Date Issued
September 2020
Journal
ACS Photonics
Publisher
American Chemical Society (ACS)
Citation
Lu, Tsung-Ju et al. “Bright High-Purity Quantum Emitters in Aluminum Nitride Integrated Photonics.” ACS Photonics, 7, 10 (September 2020): 2650–2657 © 2020 The Author(s)
Version
Original manuscript
Abstract
Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, the generation and direct integration of QEs in an aluminum nitride-based photonic integrated circuit platform is reported. For individual waveguide-integrated QEs, an off-chip count rate exceeding 6 × 104 counts per second (cps; saturation rate >8.6 × 104 cps) is measured at room temperature under continuous-wave (CW) excitation. In an unpatterned thin-film sample, antibunching with g(2)(0) ∼0.08 and photon count rates exceeding 8 × 105 cps (saturation rate >1 × 106 cps) are measured at room temperature under CW excitation. Although spin and detailed optical line width measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1021/acsphotonics.0c01259
