GaN remote epitaxy on a pristine graphene buffer layer via controlled graphitization of SiC
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252102_1_5.0235653.pdf
Description
Published version
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2.21 MB
Format
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Checksum (MD5)
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Author(s)
Lee, Seokje
Kim, Jekyung
Park, Bo-In
Kim, Han Ik
Lim, Changhyun
Lee, Eunsu
Yang, Jeong Yong
Choi, Joonghoon
Hong, Young Joon
Chang, Celesta S
Date Issued
December 16, 2024
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Seokje Lee, Jekyung Kim, Bo-In Park, Han Ik Kim, Changhyun Lim, Eunsu Lee, Jeong Yong Yang, Joonghoon Choi, Young Joon Hong, Celesta S. Chang, Hyun S. Kum, Jeehwan Kim, Kyusang Lee, Hyunseok Kim, Gyu-Chul Yi; GaN remote epitaxy on a pristine graphene buffer layer via controlled graphitization of SiC. Appl. Phys. Lett. 16 December 2024; 125 (25): 252102.
Version
Final published version
Abstract
Freestanding semiconductor membranes hold significant potential for heterogeneous integration technology and flexible electronics. Remote epitaxy, which leverages electrostatic interactions between epilayers and substrates through two-dimensional (2D) materials such as graphene, offers a promising solution for fabricating freestanding single-crystal membranes. Although the thinness, uniformity, and cleanness of 2D materials need to be meticulously controlled to enable the remote epitaxy of high-quality thin films, attaining such ideal growth templates has been challenging thus far. In this study, we demonstrate a controlled graphitization method to form a pristine graphene buffer layer (GBL) directly on SiC substrates and utilize this GBL template for GaN remote epitaxy. The quasi-two-dimensional GBL layer obtained by the method is completely free of damage or contamination, facilitating strong epitaxial interaction between the GaN epilayer and the SiC substrate. Furthermore, we reveal that a two-step growth of GaN on this GBL template enables the formation of single-crystal GaN epilayers and their exfoliation. Thus, this study represents an important step toward developing high-quality, freestanding semiconductor membranes.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1063/5.0235653
