Micromagnetic modeling of domain wall motion in sub-100-nm-wide wires with individual and periodic edge defects
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Ross_Micromagnetic Modeling.pdf
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1.66 MB
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Author(s)
Dutta, S.
Siddiqui, Saima Afroz
Currivan-Incorvia, Jean A.
Ross, Caroline A.
Baldo, Marc A.
Date Issued
December 2015
Journal
AIP Advances
Publisher
American Institute of Physics (AIP)
Citation
Dutta, S., S. A. Siddiqui, J. A. Currivan-Incorvia, C. A. Ross, and M. A. Baldo. “Micromagnetic Modeling of Domain Wall Motion in Sub-100-Nm-Wide Wires with Individual and Periodic Edge Defects.” AIP Advances 5, no. 12 (December 2015): 127206.
Version
Final published version
Abstract
Reducing the switching energy of devices that rely on magnetic domain wall motion requires scaling the devices to widths well below 100 nm, where the nanowire line edge roughness (LER) is an inherent source of domain wall pinning. We investigate the effects of periodic and isolated rectangular notches, triangular notches, changes in anisotropy, and roughness measured from images of fabricatedwires, in sub-100-nm-wide nanowires with in-plane and perpendicular magnetic anisotropy using micromagnetic modeling. Pinning fields calculated for a model based on discretized images of physical wires are compared to experimental measurements. When the width of the domain wall is smaller than the notch period, the domain wall velocity is modulated as the domain wall propagates along the wire. We find that in sub-30-nm-wide wires, edge defects determine the operating threshold and domain wall dynamics.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Creative Commons Attribution 3.0 Unported licence
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DOI of Published Version
https://doi.org/10.1063/1.4937557
