90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor
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Bandyopadhyay_D21_04r2.pdf
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Author(s)
Chandrakasan, Anantha P.
Bandyopadhyay, Saurav
Neidorff, Bob
Freeman, Dave
Date Issued
February 2013
Journal
Proceedings of the IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2013
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Bandyopadhyay, S., B. Neidorff, D. Freeman, and A. P. Chandrakasan. “90.6% Efficient 11MHz 22W LED Driver Using GaN FETs and Burst-Mode Controller with 0.96 Power Factor.” 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (February 2013).
Version
Author's final manuscript
Abstract
With the advent of reliable, high brightness and high efficacy LEDs, the lighting industry is expected to see a significant growth in the near future. However, for LEDs to completely replace the traditional incandescent and CFL bulbs, the power converters within the LED drivers need to be miniaturized. Superior figure of merit (R[subscript ds,ON]xQ[subscript g]) of Gallium Nitride (GaN) FETs over Silicon FETs [1] can enable both high efficiency and high frequency operation, thereby making power converters smaller, more efficient and reliable. By using integrated controllers and drivers, the number of components on the driver PCB can be reduced, further miniaturizing the driver. This work focuses on demonstrating a small form factor, high efficiency offline LED driver using GaN FETs with an integrated gate driver and controller circuit implemented on a 0.35μm CMOS process with [3.3V over 15V] voltage handling capability.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1109/ISSCC.2013.6487773
