Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors
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del Alamo-Hole mobility.pdf
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Author(s)
Xia, Ling
Boos, J. Brad
Bennett, Brian R.
Ancona, Mario G.
del Alamo, Jesus A.
Date Issued
February 2011
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Xia, Ling et al. “Hole Mobility Enhancement in In[sub 0.41]Ga[sub 0.59]Sb Quantum-well Field-effect Transistors.” Applied Physics Letters 98.5 (2011): 053505. © 2011 American Institute of Physics
Version
Final published version
Abstract
The impact of 〈110〉 uniaxial strain on the characteristics of p-channel In[subscript 0.41]Ga[subscript 0.59]Sb quantum-well field-effect transistors (QW-FETs) is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of the FET through the modulation of the hole mobility of the two-dimensional hole gas (2DHG) in the QW-FET. The piezoresistance coefficients of the 2DHG have been determined to be π[superscript ∥][subscript 〈110〉] = 1.17×10[superscript −10] cm[superscript 2]/dyn and π[superscript ⊥][subscript 〈110〉] = −1.9×10[superscript −11] cm[superscript 2]/dyn. The value of π[superscript ∥][subscript 〈110〉] is 1.5 times that of holes in Si metal-oxide-semiconductor (MOS) field-effect transistors and establishes InGaSb as a promising material system for a future III-V complementary MOS (CMOS) technology.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1063/1.3552963
