Frequency-Domain Analysis of Super-Regenerative Amplifiers
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Bohorquez-2009-Frequency-Domain Analysis of Super-Regenerative Amplifiers.pdf
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Author(s)
Dawson, Joel L.
Bohorquez, Jose L.
Chandrakasan, Anantha P.
Date Issued
December 2009
Journal
IEEE Transactions on Microwave Theory and Techniques
Publisher
Institute of Electrical and Electronics Engineers
Citation
Bohorquez, J.L., A.P. Chandrakasan, and J.L. Dawson. “Frequency-Domain Analysis of Super-Regenerative Amplifiers.” Microwave Theory and Techniques, IEEE Transactions on 57.12 (2009): 2882-2894. ©2009 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
Since its invention in 1922, the super-regenerative amplifier (SRA) has been used in a variety of short-range, low-power, and/or low-cost wireless systems due to its simple implementation and excellent performance for a given power budget. Growing demand for ultralow-power receivers for short-range radios has recently reawakened an interest in the theory and design of SRAs. Building on recent work and using reasonable assumptions and approximations, we present a frequency-domain model for analyzing SRAs. We then use these models to predict the response of an SRA to arbitrary deterministic and stochastic signals including sinusoids, pulsed-sinusoids, and additive white Gaussian noise. Using the results, we present formulas for calculating the sensitivity and selectivity of SRAs. We also introduce the concept of a trigger-time that is particularly useful for accurately determining the optimal threshold in on-off keying (OOK) receivers and helps avoid the problems introduced by nonlinearity in SRAs. Finally, we present a prototype OOK SRA that achieves a sensitivity of -90 dBm at a bit rate of 300 kbps (BER of 10[superscript -3]) while consuming 500 muW, and show that its measured sensitivity matches theory within 1 dB.
Subjects
super-regenerative receiver
short-range radio
oscillators
low power
Super-regenerative amplifier (SRA)
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/tmtt.2009.2033843
