Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators
Name
PhysRevB.96.184402.pdf
Size
3.27 MB
Format
Adobe PDF
Checksum (MD5)
1c5cc85eb960effd9a082fb39e5efd88
Author(s) • • • • • • • • •
Krieger, J. A.
Husanu, M.-A.
Sostina, D.
Ernst, A.
Otrokov, M. M.
Prokscha, T.
Schmitt, T.
Suter, A.
Vergniory, M. G.
Chulkov, E. V.
Date Issued
November 2017
Journal
Physical Review B
Publisher
American Physical Society
Citation
Krieger, J. A., et al. “Spectroscopic Perspective on the Interplay between Electronic and Magnetic Properties of Magnetically Doped Topological Insulators.” Physical Review B, vol. 96, no. 18, Nov. 2017. © 2017 American Physical Society
Version
Final published version
Abstract
We combine low energy muon spin rotation (LE-μSR) and soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)[subscript 2]Te[subscript 3]. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)[subscript x](Bi,Sb)[subscript 2−x]Te[subscript 3] at doping levels x≳0.16. The observed magnetic transition is not sharp in temperature indicating a gradual magnetic ordering. We find that the evolution of magnetic ordering is consistent with formation of ferromagnetic islands which increase in number and/or volume with decreasing temperature. Resonant ARPES at the V L[subscript 3] edge reveals a nondispersing impurity band close to the Fermi level as well as V weight integrated into the host band structure. Calculations within the coherent potential approximation of the V contribution to the spectral function confirm that this impurity band is caused by V in substitutional sites. The implications of our results on the observation of the quantum anomalous Hall effect at mK temperatures are discussed.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PhysRevB.96.184402