High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor
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High temperature terahertz.pdf
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Author(s)
Teng, J. H.
Hou, Han Wei
Liu, Zhihong
Palacios, Tomas
Chua, Soo-Jin
Date Issued
April 2017
Journal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Hou, H. W., Z. Liu, J. H. Teng, T. Palacios, and S. J. Chua. “High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor.” Scientific Reports 7 (April 21, 2017): 46664.
Version
Final published version
Abstract
In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1038/srep46664
