Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
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Berggren-Understanding of hydrogen.pdf
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606.48 KB
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Checksum (MD5)
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Author(s)
Berggren, Karl K.
Yang, Joel K. W.
Cord, Bryan M.
Duan, Huigao
Klingfus, Joseph
Nam, Sung-Wook
Kim, Ki-Bum
Rooks, Michael J.
Date Issued
December 2009
Journal
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
Yang, Joel K. W. et al. “Understanding of Hydrogen Silsesquioxane Electron Resist for Sub-5-nm-half-pitch Lithography.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27.6 (2009): 2622. © 2009 American Vacuum Society
Version
Final published version
Abstract
The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than developer contrast. Finally, they showed that with a high-development-rate process, a short duration development of 15 s was sufficient to resolve high-resolution structures in 15-nm-thick resist, while a longer development degraded the quality of the structures with no improvement in the resolution.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1116/1.3253652
