Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks
Name
07112689.pdf
Size
512.78 KB
Format
Adobe PDF
Checksum (MD5)
91cffe6d7c825dc9857aff0319f71ccc
Author(s)
King, M. P.
Dickerson, J. R.
DasGupta, S.
Marinella, M. J.
Kaplar, R. J.
Piedra, Daniel
Sun, Min
Palacios, Tomas
Date Issued
June 2015
Journal
2015 IEEE International Reliability Physics Symposium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
King, M. P.; Dickerson, J. R.; DasGupta, S.; Marinella, M. J.; Kaplar, R. J.; Piedra, D.; Sun, M. and Palacios, T. “Trapping Characteristics and Parametric Shifts in Lateral GaN HEMTs with SiO₂/AlGaN Gate Stacks.” 2015 IEEE International Reliability Physics Symposium (April 2015). © 2015 Institute of Electrical and Electronics Engineers (IEEE)
Version
Final published version
Abstract
Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO₂ dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/IRPS.2015.7112689
