Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on SiââxGex/Si virtual substrates
Name
AMMNS024.pdf
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39.59 KB
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Checksum (MD5)
03a9732df1d83610a4e5d8da205001e2
Author(s)
Lee, Minjoo L.
Leitz, Christopher W.
Cheng, Zhiyuan
Antoniadis, Dimitri A.
Fitzgerald, Eugene A.
Date Issued
January 2002
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ‚€.₃Geâ‚€.₇ virtual substrates. The poor interface between silicon dioxide (SiOâ‚‚) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial silicon surface layer grown at 400° C. Ge p-MOSFETs fabricated from this structure show a hole mobility enhancement of nearly 8 times that of co-processed bulk Si devices, and the Ge MOSFETs have a peak effective mobility of 1160 cm²/V-s. These MOSFETs demonstrate the possibility of creating a surface channel enhancement mode MOSFET with buried channel-like transport characteristics.
Subjects
strained-Ge
SiGe
germanium
MOSFET
mobility
strained-Si
pMOSFET
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