Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride
Name
Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride.pdf
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2.41 MB
Format
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Author(s)
Berhane, Amanuel M.
Bodrog, Zoltán
Fiedler, Saskia
Schröder, Tim
Gali, Adam
Toth, Milos
Aharonovich, Igor
Jeong, Kwang-Yong
Schroder, Tim
Vico Trivino, Noelia
Date Issued
March 2017
Journal
Advanced Materials
Publisher
Wiley Blackwell
Citation
Berhane, Amanuel M. et al. “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride.” Advanced Materials 29, 12 (February 2017): 1605092 © 2017 WILEY-VCH Verlag GmbH & Co
Version
Original manuscript
Abstract
Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1002/adma.201605092
