Evidence for ferromagnetic coupling at the doped topological insulator/ferrimagnetic insulator interface
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Ross_Evidence for.pdf
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Checksum (MD5)
61197694c4f2881c165a3dd987527ebe
Author(s)
Liu, Wenqing
He, Liang
Zhou, Yan
Murata, Koichi
Jiang, Ying
Wang, Yong
Xu, Yongbing
Zhang, Rong
Wang, Kang. L.
Onbasli, Mehmet C.
Date Issued
March 2016
Journal
AIP Advances
Publisher
American Institute of Physics (AIP)
Citation
Liu, Wenqing et al. “Evidence for Ferromagnetic Coupling at the Doped Topological Insulator/ferrimagnetic Insulator Interface.” AIP Advances 6, 5 (May 2016): 055813 © 2016 Author(s)
Version
Final published version
Abstract
One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (T[subscript c] ). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi₂Se₃ by means of proximity to the high-T[subscript c] ferrimagnetic insulator (FMI) Y₃Fe₅O₁₂ and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi[subscript 2-x] Cr [subscript x] Se₃/Y₃Fe₅O₁₂ interface. We found that the Bi[subscript 2-x] Cr [subscript x] Se₃ grown on Y₃Fe₅O₁₂ (111) predominately contains Cr ³⁺ cations, and the spin direction of the Cr³⁺ is aligned parallel to that of tetrahedral Fe³⁺ of the YIG, revealing a ferromagnetic exchange coupling between the Bi [subscript 2-x] Cr [subscript x] Se₃ and the Y₃Fe₅O₁₂.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1063/1.4943157
