Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers
Name
oe-26-3-2220.pdf
Description
Published version
Size
3.99 MB
Format
Adobe PDF
Checksum (MD5)
9ccc38fe8d01bd4db27bcb7814a0fd72
Author(s)
Li, Nanxi
Magden, Emir Salih
Su, Zhan
Singh, Neetesh
Ruocco, Alfonso
Xin, Ming
Byrd, Matthew James
Callahan, Patrick T.
Bradley, Jonathan
Baiocco, Christopher
Date Issued
January 2018
Journal
Optics Express
Publisher
Optical Society of America (OSA)
Citation
Li, Nanxi et al. "Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers." Optics Express 26, 3 (January 2018): 2220-2230 © 2018 Optical Society of America
Version
Final published version
Abstract
Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al₂O₃:Ho³⁺ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al₂O₃:Ho³⁺ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at < 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Lincoln Laboratory
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DOI of Published Version
https://doi.org/10.1364/oe.26.002220
