The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures
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Author(s)
Lin, Xi
Hu, Jingshi
Lai, Andrew Pan
Zhang, Zhenning
MacLean, Kenneth
Dillard, Colin R.
Xie, Ya-Hong
Kastner, Marc
Date Issued
July 2011
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Lin, Xi et al. “The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures.” Journal of Applied Physics 110.2 (2011): 023712.
Version
Author's final manuscript
Abstract
Quantum dots in Si/SiGe heterostructures are expected to have relatively long electron spin decoherence times, because of the low density of nuclear spins and the weak coupling between nuclear and electron spins. We provide experimental evidence suggesting that electron motion in a conductive layer parallel to the two-dimensional electron gas, possibly resulting from the donors used to dope the Si quantum well, is responsible for the well-known difficulty in achieving well-controlled dots in this system. Charge motion in the conductive layer can cause depletion on large length scales, making electron confinement in the dot impossible, and can give rise to noise that can overwhelm the single-electron charging signal. Results of capacitance versus gate bias measurements to characterize this conductive layer are presented.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1063/1.3610524
