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Effects of recoil spectra and electronic energy dissipation on defect survival in 3C-SiC
Name
1770636.pdf
Description
Accepted version
Size
1.54 MB
Format
Adobe PDF
Checksum (MD5)
a49639f91fdfd2e8f6d37ea04db00c6b
Author(s)
Nuckols, Lauren
Crespillo, Miguel L
Yang, Yang
Li, Ju
Zarkadoula, Eva
Zhang, Yanwen
Weber, William J
Date Issued
2021
Journal
Materialia
Publisher
Elsevier BV
Citation
Nuckols, Lauren, Crespillo, Miguel L, Yang, Yang, Li, Ju, Zarkadoula, Eva et al. 2021. "Effects of recoil spectra and electronic energy dissipation on defect survival in 3C-SiC." Materialia, 15.
Version
Author's final manuscript
Abstract
© 2021 Acta Materialia Inc. The coincidence of electronic and damage energy dissipation from energetic ions to an atomic lattice can significantly affect damage production along the ion trajectory due to spatial overlap of inelastic and elastic processes. Damage production and disordering in single crystal 3C-SiC from 5 MeV Si and 10 MeV Au ions is investigated using ion-channeling experiments. While defects are created by damage energy dissipation via elastic scattering, electronic energy dissipation via electron-phonon coupling decreases defect survival along the ion trajectory for Si ions. The more energetic recoil spectrum for 10 MeV Au ions leads to weaker spatial coupling of electronic and damage energy dissipation processes, and damage production is only weakly affected.
Terms of Use
Creative Commons Attribution-NonCommercial-NoDerivs License
Persistent DSpace Link
DOI of Published Version
10.1016/J.MTLA.2021.101023
