Making Large‐Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening
Name
TiS2 thin film sulfurization - preprint 200428.pdf
Size
910.25 KB
Format
Adobe PDF
Checksum (MD5)
c4068ea5ddac2b5852b2e59d6e2a6bd2
Author(s)
Li, Yifei
Singh, Akshay k
Reidy, Kate
Jo, Seong Soon
Ross, Frances Mary
Jaramillo, Rafael
Date Issued
July 2020
Journal
Advanced Functional Materials
Publisher
Wiley
Citation
Li, Yifei et al. "Making Large‐Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening." Forthcoming in Early View: 2003617. © 2020 WILEY‐VCH Verlag GmbH & Co
Version
Author's final manuscript
Abstract
The synthesis of large‐area TiS2 thin films is reported at temperatures as low as 500 °C using a scalable two‐step method of metal film deposition followed by sulfurization in an H2S gas furnace. It is demonstrated that the lowest‐achievable sulfurization temperature depends strongly on the oxygen background during sulfurization. This dependence arises because Ti-O bonds present a substantial kinetic and thermodynamic barrier to TiS2 formation. Lowering the sulfurization temperature is important to make smooth films, and to enable integration of TiS2 and related transition metal dichalcogenides—including metastable phases and alloys—into device technology.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1002/adfm.202003617
