Effects of F3+ ion implantation on the properties of W and W0.5(TaTiVCr)0.5 for depth marker-based plasma erosion analysis
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20ja061_full.pdf
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Author(s)
Waseem, Owais Ahmed
Woller, Kevin Benjamin
Sweidan, Faris Bassam
JinRyu, Ho
Date Issued
September 2020
Journal
Nuclear Materials and Energy
Publisher
Elsevier
Abstract
The irradiation resistance of tungsten (W) and a high-entropy alloy-based material W0.5(TaTiVCr)0.5 was analysed using depth marker implantation (F3+ ions irradiation). Mirror-polished W and W0.5(TaTiVCr)0.5 samples were exposed to 5.0 MeV and 4.2 MeV, respectively, F3+ ions up to a maximum fluence of 3.2x1012 ions/cm2. The scanning electron and atomic force microscopy of implanted W showed nanostructure and pinholes, respectively, whereas the surface of implanted W0.5(TaTiVCr)0.5 remained fairly smooth. The nanoindentation hardness of W and W0.5(TaTiVCr)0.5 increased from 6.6 GPa to 8.5 GPa and from 13.9 GPa to 16.3 GPa, respectively, due to implantation. The ion implantation induced lattice defects and compressive stress, as a result, the BCC peaks of W and W0.5(TaTiVCr)0.5 moved to higher Bragg angles. The irradiation induced strain in W0.5(TaTiVCr)0.5 (4.4x10-4) remained lower than that in pure W (8.5x10-4). The comparison of W and W0.5(TaTiVCr)0.5 suggested the higher resistance of W0.5(TaTiVCr)0.5 to high energy ion implantation.
Description
Submitted for publication in Nuclear Materials and Energy
MIT Department
Massachusetts Institute of Technology. Plasma Science and Fusion Center
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1016/j.nme.2020.100806
